ММБТ2222А Transistor | Datasheet | Pinout | Equivalent HY Electronic (Cayman) Limited

MMBT2222A Equivalent

mmbt2222a equivalent Picture
MMBT2222A parameter summary:
mmbt2222a belongs to NPN type transistor; package is SOT-23 (SMD type)
Maximum Limit Parameters:
– Collector-base maximum withstand voltage value (BVCBO): 75V
– Collector – emitter maximum withstand voltage value (BVCEO): 40V
– Maximum emitter-base voltage withstand (BVEBO): 6V
– Maximum collector current (IC) (maximum current that can be tolerated): 600mA (continuous)
– Maximum power consumption (PCM): 300mW
The main characteristics are:
Amplification characteristics: DC gain (hFE) range is 100-300 (that is, can amplify the base current is between 100 times to 300 times)
Switching characteristics: saturation voltage drop of 0.6V, on-time ≤ 285ns, off-time ≤ 35ns; with lower saturation voltage drop and faster on-off time, it is very suitable for use as a switch in the circuit.
The following models are equivalent substitute models for MMBT2222A

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MMBT3904 Picture

BC547 Picture

Optocoupler Control Circuit Diagram

In this figure an optocoupler is used to control the conduction and switching off of the mmbt2222a. The left side of the optocoupler is a light emitting diode, and when a voltage is applied to both ends the right side of the optocoupler is turned on, thus controlling the conduction of Q1 (mmbt2222a). The RL of the analogue load will then flow current.