MJE15032G | Transistor Datasheet & Equivalent onsemi
- Тип транзистора: НПН
- Токосъемник (Ic) (макс.): 8 A
- Напряжение пробоя коллектор-эмиттер (макс.): 250 В
- Упаковка: ТО-220-3

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MJE15032G electronic component
MJE15032G Pinout
mje15032g Picture
MJE15032G is a NPN power transistor for high power scenarios, the collector and emitter voltage withstand value of 250V, the collector allows the flow of sustained maximum current of 8A (maximum peak current allowed to reach 16A), and has a wide operating temperature range (-65 ~ 150 ℃), more suitable for power supply systems, motor control and power amplifier circuit design requirements. MJE15032G adopts TO-220 package (larger package can have better heat dissipation), comes with heatsink mounting holes, can be used with heatsink in high power requirements, especially in the topology design of switching power supply and inverter drive circuit shows stable switching characteristics. If higher power levels are required, compatible models such as MJE13009 or BU508A can be selected for design upgrades and optimisation.
Приколоть | Symbol | Описание |
---|---|---|
1 | База | Control input pins for current amplification or switching control |
2 | Коллекционер | Current input, usually connected to a power supply or load |
3 | Эмиттер | The outflow end of the current, forming a current path with the collector, generally grounded or connected to the loop, completing the current cycle |