IRF530 | Circuit | Pinout | Amplifier | Price Harris
- FET Type: N-канал
- Drainto Source Voltage(Vdss): 100 V
- Current-Continuous Drain(Id)@25°C: 14A (Tc)
- Упаковка: TO-220AB
IRF530 circuit
IRF530 Pinout Diagram
irf530 is an N-channel MOS field effect tube in TO-220AB package, the main features are easy to use in parallel, low on-resistance, very fast switching speed, and simple drive circuit; so it is used as a switching tube in most cases, such as DC-DC circuits (switching at different frequencies to output a specified DC voltage).
Irf530 maximum withstand voltage of 100V, in the series belongs to the lower value of the on-resistance of 0.16Ω (the smaller the on-resistance, that is, the lower the static power consumption), on-resistance is lower in this series, due to the on-resistance is relatively small, although the power consumption will be correspondingly small, but is not suitable for high-power circuit applications; the maximum operating temperature of 170 ° C; alternative products are IRF530PBF, RFP30NO6, IRFZ44, etc. (When choosing alternative materials, consider the alternative components and support the maximum current flowing through).
How to drive irf530:
IRF530 driver circuit diagram
Driving the irf530 requires a large enough transient current, and in addition to direct drive (which can be used if the driver device can output enough current), the more commonly used drive method is a push-pull drive circuit. The 1K resistor in the figure is a simulated load (can be led, fan, motor and other devices). When the microcontroller drives the MOS tube directly, the current may not be enough, resulting in slow switching speed and serious heating of the MOS tube, so a current amplification circuit is needed. The diagram uses NPN and PNP emitters connected to each other to achieve the function of current amplification (for the low side of the NMOS driver), which is used to drive the irf530.
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