БС170 datasheet | pinout & n-channel MOSFET
- Тип полевого транзистора: N-канал
- Напряжение сток-исток (Vdss): 60 В
- Ток непрерывного стока (Id) при 25°C: 300mA (Ta)
- Упаковка: TO-92

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BS170 electronic component
BS170 Pinout
БС170
Pins are defined as follows:
Приколоть | Символ | Описание |
---|---|---|
1 | Gate | The gate control pin controls the on-off and off of the transistor by applying voltage. |
2 | Drain | The drain is the pin through which current flows into the MOSFET. |
3 | Source | The source is the pin through which current flows out of the MOSFET. |
BS170 equivalent
BS170 pinout
The BS170 is a frequently used n-channel MOSFE tube. Its specific parameters are as follows: the maximum voltage value is 60V, which can meet the basic requirements of all low-voltage circuits; The maximum continuous flow current is 500mA, and the on-resistance (Rds(on) is about 1.2 ohms (typical value, up to 5 ohms), which can reduce power loss in small current applications. The BS170 switch takes about 20ns at a time, which is very suitable for use in high frequency switching circuits. Packaged as TO-92-3, it has the advantage of being small and easy TO weld. BS170 threshold voltage (Vgs(th)) is 0.8V to 3V, when the gate voltage reaches this range, the MOSFET starts to turn on, 0.8V to 3V This voltage range can be directly driven by the single chip computer (you can do not need to drive the circuit, in the product can further reduce the cost). In general, the selection of components should leave a 20% margin, so when using this transistor in circuit design, it is necessary to multiply all the maximum parameters by 0.8 to determine the selection. Because of the high quality and low price of the transistor, it is widely used in low-voltage circuit design needs to use the amplification function or switching function. The main application areas are signal amplification power, DCDC circuit and so on.
BS170 Replaceable Chip Table
Имя | Тип | Vdss | Vgs | Id | Pd | Упаковка |
---|---|---|---|---|---|---|
ММБФ170-7-Ф | N-MOSFET | 60V | 3В | 500мА | 300mW | СОТ-23 |
SSM3K357R,LF | N-MOSFET | 60V | 1,3 В | 650mA | 1 Вт | СОТ-23 |
WST2N7002A | N-MOSFET | 60V | 3В | 700mA | 250mW | СОТ-23Н |
2N7002 | N-MOSFET | 60V | 2,5 В | 500мА | 225mW | СОТ-23 |
ZVN2106GTA | N-MOSFET | 60V | 2.4V | 710mA | 2W | СОТ-223-4 |
ММБФ170-7-Ф
SSM3K357R,LF
WST2N7002A
2N7002
ZVN2106GTA