SSM3J332R,LF – SOT-23 PFET Datasheet & Specs Toshiba Semiconductor and Storage
SSM3J332R,LFReference manual provides key specifications and application insights. Designed for SOT-23 package, this P-FET ensures efficient circuit performance.
- FETT ype: P-Channel
- Drainto Source Voltage(Vdss): 30 V
- Current-Continuous Drain(Id)@25°C: 6A (Ta)
- RdsOn(Max)@IdVgs: 42mOhm @ 5A, 10V
- Price: inquiry
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