SI2307CDS-T1-GE3 | Datasheet | PDF | Circuit
Get the SI2307CDS-T1-GE3Reference manual for comprehensive details on its specifications, applications, and performance. This MOSFET model is ideal for low power and efficient switching. Find the SI2307CDS-T1-GE3 in PDF format, including circuit diagrams, and explore its potential in various designs and projects.
- Brands: Vishay Siliconix
- Download: SI2307CDS-T1-GE3 Datasheet PDF
- Package: SOT-23-3 (TO-236)
- Series: TrenchFET®
- In Stock: 14,418
- FETT ype: P-Channel
- Drainto Source Voltage(Vdss): 30 V
- Current-Continuous Drain(Id)@25°C: 3.5A (Tc)
- RdsOn(Max)@IdVgs: 88mOhm @ 3.5A, 10V
- Price: inquiry
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