IRF830 | Datasheet, Equivalent, Pinout, Application Circuits STMicroelectronics

IRF830 Pinout Equivalent

1：Overview of the IRF830：

The IRF830 series is an N-channel enhancement-mode high-voltage power MOSFET widely used in power conversion, motor driving, and inverters. The IRF830 has a voltage rating of 500V, a maximum current of 4.5A, and an internal resistance of 1.5 ohms. It can be applied in power conversion circuits (such as DC-AC or DC-DC converters or the secondary circuit of an inverter) and motor driving (such as high-voltage H-bridge PWM motor drivers). However, when designing, it is important to configure overcurrent, short-circuit, and overheating protection to prevent damage to the MOSFET.IRF830

2：IRF830 Important pin function definition:

3：Alternative model recommendation

IRF840：The IRF840 is an N-channel enhancement-mode power MOSFET widely used in high-voltage switching circuits. It features a high withstand voltage of 500V and low on-resistance (typical value 1.8Ω), with a continuous drain current of 8A. It is suitable for applications such as switch-mode power supplies, motor drives, inverters, and other high-frequency switching scenarios.

STP5NK50Z：With a breakdown voltage of up to 500V, it can adapt to high-voltage working environments, ensuring stable and reliable performance in high-voltage applications. The continuous drain current can reach up to 5A, meeting the drive requirements for various medium and low-power loads.

FQP5N50C：This MOSFET has low on-resistance, which helps reduce power loss during conduction and improves circuit efficiency. With its fast switching speed, the FQP5N50C can quickly switch between on and off states, making it suitable for high-frequency switching circuits.

IXTH5N50P：IXTH5N50P is an N-channel enhancement-mode power MOSFET produced by IXYS Corporation.This MOSFET stands out for its low on-resistance, which effectively reduces power loss during conduction and enhances power conversion efficiency. Additionally, it features fast switching speed, allowing quick transitions between on and off states, making it particularly suitable for high-frequency switching circuits.

Comparison of main parameters for several models