IRF540 | Datasheet, Pinout, Equivalent, Amplifier Circuit STMicroelectronics
- Brands: STMicroelectronics
- Download: IRF540 Datasheet PDF
- Package: TO-220
- Series: STripFET™ II
- In Stock: 24,094
- FETT ype: N-Channel
- Drainto Source Voltage(Vdss): 100 V
- Current-Continuous Drain(Id)@25°C: 22A (Tc)
- RdsOn(Max)@IdVgs: 77mOhm @ 11A, 10V
- Price: inquiry
IRF540 Equivalent
IRF540 Picture
IRF540 is an electronic engineer in the circuit design of a more commonly used N-channel enhancement MOSFET tube, with TO-22OAB this kind of relatively easy to dissipate the heat of the package, and the price is very cheap; the maximum branch of 33A current (under normal operating conditions, the temperature of the typical 25 degrees Celsius) continues to flow through, high current means that the maximum withstand the voltage is relatively large (through the datasheet can see the maximum withstand voltage of 100V), and the transistor also has a maximum power of 130W, is very suitable for high-power circuits or audio amplifiers; Rds is only 40 milliohms. Manual can see the maximum withstand voltage of 100V), and the transistor also has a maximum power of 130W, very suitable for high-power circuits or audio amplifiers; Rds is only 40 mOhm, components in the state of on-state loss of energy will be relatively small compared to other ones; irf540 also has a very good performance is to support fast switching, coupled with excellent anti-voltage Another good performance of irf540 is to support fast switching, coupled with excellent resistance to voltage, so that it can be used in high-voltage load switching circuits; in practice, the transistor is mainly used for voltage inverters, DCDC circuits, and high-speed switching circuits.
irf540 Replaceable Chip Table
Name | Type | Vdss | Vgs | Pd | Package |
---|---|---|---|---|---|
SQD40P10-40L_GE3 | N-MOSFET | 100V | 2.5V | 136W | TO-252(DPAK) |
OSD50N10G | N-MOSFET | 100V | 1.8V (typical value) | 135W | TO-252 |
CMD40N20 | N-MOSFET | 200V | 3V | 135W | TO-252 |
IPD110N12N3 | N-MOSFET | 120V | 4V | 136W | TO-252-3 |
AGM15T16D | N-MOSFET | 150V | 3.2V | 139W | TO-252 |
SQD40P10-40L_GE3 Picture
OSD50N10G Picture
CMD40N20 Picture
IPD110N12N3 Picture
AGM15T16D Picture
IRF540 Circuit Diagram
irf540 Picture
IRF540 is a commonly used N-channel enhanced MOSFT, mainly used in high-power electrical drivers, switching power supplies, inverters and other electronic circuits. Because of its high current and voltage tolerance, it is one of the first choice objects in many power electronic circuit designs. Next, we will introduce the detailed parameters of the IRF540 and a typical application circuit diagram.
IRF540 Basic parameters:
Type: N channel MOSFET;
The maximum tolerable voltage is (VDS) : 100V;
The maximum current is (ID) : 33A;
The on-resistance is (RDS(on)) : 0.044 ohms;
The driving voltage is (VGS(th)) : 2~4V;
Package: TO-220AB-3
IRF540 Application Circuit Design:
irf540 application design drawing
This design is to use IRF540 to drive a high-power relay design, the circuit is mainly composed of a triode 2N3904 and relay and IRF540; First of all, the leftmost nmos driver circuit composed of 2N3904 is used to amplify the output of MCU to drive the IRF540 in the back. When MCU gives a high voltage level, Q1 conducts 24V through the two resistors R2 and R3 to divide the voltage to Q1 so that there is enough voltage to drive IRF540. When the IRF540 is turned on, 24V directly supplies power to the relay, and the relay coil is drawn and turned from normally open to normally closed. The function of D1 is to protect the circuit from burning out due to connection to the reverse power supply.
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