IRF450 | Datasheet | Equivalent | Price
- Brands: Infineon Technologies
- Download: IRF450 Datasheet PDF
- Package: TO-204AA (TO-3)
- Series: HEXFET®
- In Stock: 3,764
- FETT ype: N-Channel
- Drainto Source Voltage(Vdss): 500 V
- Current-Continuous Drain(Id)@25°C: 12A (Tc)
- RdsOn(Max)@IdVgs: 500mOhm @ 12A, 10V
- Price: inquiry
IRF450 Pinout Equivalent
irf450 pinout Picture
IRF450 is a very commonly used N-channel MOSFET, because of its excellent performance is widely used in high-power high-frequency switching circuit, motor drive and protection circuit; Following this article, we will introduce the IRF450 pin function, important basic parameters, and alternative models in detail to help readers better understand and use the device.
IRF450 Basic parameters:
Type: N channel MOSFET;
The maximum voltage is (VDS) : 500V;
The maximum current flowing sustainably is (ID):12A;
The on-resistance is (RDS(on)) : 0.4 ohms;
The on-voltage is (VGS(th)) : 2~4V;
Encapsulation: TO-204AA;
Pin Function Table:
Pin | Symbol | Description |
---|---|---|
1 | Gate | The input is connected to the signal port, which controls the switching of the transistor |
2 | Drain | Connect the load and current flows into the pin |
3 | Source | For connecting ground, current flows out of the pin |
Replacement Product Model List:
Picture | Name | Type | Vdss | Vgs(th) | Id | Pd | Package |
---|---|---|---|---|---|---|---|
![]() |
IRFP450PBF | N-MOSFET | 500V | 4V | 14A | 190W | TO-247AC-3 |
![]() |
IRFP450-HXY | N-MOSFET | 500V | 4V | 14A | 190W | TO-247S |
![]() |
RS25N50W | N-MOSFET | 500V | 3V | 25A | 190W | TO-247 |
![]() |
HIRFP450APBF | N-MOSFET | 500V | 2V | 14A | 190W | TO-247S |
![]() |
STP20NK50ZSTP20NK50Z | N-MOSFET | 500V | 4.5V | 17A | 190W | TO-220 |
Precautions for use:
Gate drive voltage: Be careful not to exceed the rated voltage too much, otherwise the MOS will be damaged, up to 20V without damage; In general, we also connect a diode to the grid to prevent reverse breakdown;
Heat dissipation: the power of this MOSFET can be up to 190W, so if the heat dissipation is not done well, there will be a great probability of damage to the entire circuit;
PCB layout: In the design of PCB, it is necessary to consider the parasitic inductance of the grid drive circuit, which can improve the switching speed and reduce the switching loss;
More Like This
Also Add to Cart
IRFU9024NPBF
Rochester Electronics, LLC
FDG6335N
Rochester Electronics, LLC
MMBFJ201
Rochester Electronics, LLC
IRF3205PBF
Rochester Electronics, LLC
IRFP1405PBF
Rochester Electronics, LLC
IRF3205ZSTRLPBF
Rochester Electronics, LLC
IRFP4229PBF
Rochester Electronics, LLC
IRFB7437PBF
Rochester Electronics, LLC
IRLR9343TRPBF
Rochester Electronics, LLC
IRFP4468PBF
Rochester Electronics, LLC


