BU508A | transistor datasheet | equivalent | pinout STMicroelectronics

BU508A Transistor Pinout

bu508a transistor pinout Diagram

Triode is in a silicon-based (generally silicon, part of the Ge) semiconductor substrate on the existence of two PN junctions, two PN junctions to the entire silicon-based semiconductor is divided into three parts, the middle part of the base area (the main role is to control the flow of current from the collector to the emitter), both sides of the part of the emitter and the collector (the current inflow and outflow of the pin), the arrangement of the PNP and NPN two kinds. bu508a It belongs to NPN type of transistor, package is TO-247-3, the maximum breakdown voltage of collector and emitter is 700V, the maximum saturation current is 4.5A, and the quiescent current of cut-off is 1mA, it has very low standby power consumption and great power, and it can be used in low-power scenarios or high-power applications.

Note that if used in high power scenarios an external thermally conductive silicone grease or heat sink is required to ensure a good working environment. BUT11A or 3DD15 can be used instead.

BU508A Equivalent Components

This is a list of equivalent model numbers for the BU508A NPN type triode, which is mainly used in switching power supplies, power amplification and other scenarios.

Picture	Model Name	Makers	Maximum Power	Maximum Voltage	Maximum Current	Package Type
	BU508A	Sanyo/STMicroelectronics	125W	700V	8A	TO-3P
	BU508D	Sanyo/NXP	125W	1500V	8A	TO-3P
	BU508AF	STMicroelectronics	50W	700V	8A	TO-3P
	2SC3657	Toshiba	80W	850V	2A	TO-3P
	2SC2625	Fuji Electric	80W	400V	10A	TO-3P
	KSC5027-R	Mitsubishi	150W	80V	15A	TO-220

Note: When replacing, you should pay attention to the voltage, current, etc. to see if there is a mismatch. Check whether the package type is the same, so that it can not be installed or heat dissipation is not good.