1N5819 Diode Datasheet | Schottky | Specifications | Voltage Drop NTE Electronics, Inc
- Brands: NTE Electronics, Inc
- Download: 1N5819 Datasheet PDF
- Package: DO-204AL, DO-41, Axial
- Series: -
- In Stock: 1,184
- Voltage-DCReverse(Vr)(Max): 40 V
- Current-AverageRectified(Io): 1A
- Voltage-Forward(Vf)(Max)@If: 600 mV @ 1 A
- ReverseRecoveryTime(trr): -
- Price: inquiry
1N5819 Diode Voltage Drop
1N5819 Diode Voltage Drop Diagram
Main parameters:
Maximum forward current allowed to flow (IF): The maximum forward current of the 1N5819 is 1A (meaning that the maximum current allowed to flow for a long time is 1A), which also means that when designing the circuit, we have to consider that the maximum sustained current should not be more than 1A (the peak current is 25A, and more than 25A is bound to break down). When designing a circuit, we must consider whether the 1n5819 can meet the requirements based on the amount of current required.
Maximum reverse withstand voltage (VR): 1N5819’s maximum reverse voltage is 40V, which means that the voltage can not exceed 40V when working in reverse, in the circuit design, if you need to use 1N5819 as a reverse protection, then here is to ensure that the input voltage will not exceed 40V, otherwise the protection circuit can not play a protective role.
Forward voltage drop (VF): 1N5819 in the current flow of 1A, its forward voltage drop of 0.46V, a small forward voltage drop means that the 1N5819 additional losses (such as heat dissipation of energy) is low.
Recovery time (trr): the reverse recovery time of the 1N5819 is 150ns, meaning that the diode fully recovers in 150ns after reverse turn-off. this parameter is very important for the design of high-speed switching circuits, which determines the switching response time of this part of the circuit (theoretically, the smaller the better).
Detailed analysis of forward voltage drop:
1 Typical values and test conditions: As stated in the datasheet, at 25°C with 1A current flowing, the typical forward voltage drop of the 1N5819 is 0.45 V. This characteristic is significantly better than that of most conventional silicon-based diodes (e.g., the 1N4007 has a typical forward voltage drop of 1.1 V with 1A current), which indicates that the 1N5819 operates at a higher efficiency.
2 dynamic voltage drop characteristics: when the junction temperature from 25°C to 125°C, the forward conduction voltage drop will drop about 1.5V, so we have to pay attention to the heat dissipation of components in the design of circuits (because the forward voltage drop is reduced, in the stabilization of the same power will inevitably require a larger current, and therefore generate more heat, may exceed the junction temperature to burn out the components).
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