IRF3808PBF | Datasheet | PDF Infineon Technologies
- FET-Typ: N-Kanal
- Drain-Source-Spannung (Vdss): 75 V
- Strom-Dauerentnahme (Id) bei 25 °C: 140A (Tc)
- Paket: TO-220AB

KOSTENLOSE Lieferung für Bestellungen über HK$250.00

Schnelle Reaktion, schnelles Angebot

Blitzversand, keine Sorgen nach dem Verkauf

Originalkanal, Garantie der authentischen Produkte
IRF3808 MOSFET Overview
The IRF3808 is a high-performance N-channel power MOSFET made by Infineon. It comes in a TO-220AB package and is used in power management and control applications requiring high current and efficiency. With its low on-resistance, this MOSFET handles large currents, making it ideal for motor drives, switch-mode power supplies, and inverters.
Key Features:
Drain-Source Voltage (VDSS): 75V
Maximum Continuous Drain Current (ID): 140A (at 25°C)
RDS(ein) (On-state Resistance): Typical value 5.9 mΩ, Maximum value 7.0 mΩ (VGS=10V, ID=82A)
Pulse Drain Current (IDM): 550A (maximum)
Gate Charge (QG): Typical value 150 nC, Maximum value 220 nC
Package Type: TO-220AB
Operating Junction Temperature: -55°C to +175°C
Maximum Gate-Source Voltage (VGS): ±20V
High-frequency switching capability, with low switching losses.
Anwendungen:
Power Management Systems: Suitable for efficient switch-mode power supplies, DC-DC converters, UPS, and more.
Motor Drives: Applications in DC motor drivers, variable frequency drives, and servo drives.
Automotive Electronics: Used in automotive battery management systems, integrated starter alternators (ISA), etc.
Solar Inverters: High-efficiency inverter designs for renewable energy systems.
IRF3808 PINOUT
PIN-Nummer | Pin-Name | Beschreibung |
---|---|---|
1 | Tor (G) | Gate: Controls MOSFET switching (connect to gate driver circuit) |
2 | Abfluss (D) | Drain: Connects to load (current flows Drain → Source when on) |
3 | Quelle (S) | Source: Typically connected to ground or current return |
When working with this MOSFET, make sure the gate voltage (VGS) stays within ±20V — going over that can easily damageit.
For the drain-source voltage (VDSS), keep it under75V, and don’t let the current go beyond140A. It might seem fine at first, butpushing those limits will shorten its life or cause it to fail altogether.
Beforepowering anything up, always take a second to double-check the pinorientation. It’s a small step, but getting it wrong can lead tobig problems.
And one more tip — the gate is sensitive to staticEven a little Ecan cause issues, so it’s worth grounding yourself or using protection when handling it.
IRF3808 Equivalent
Modell | Paket | VDSS | ICHD | RDS(ein) | Merkmale |
---|---|---|---|---|---|
IRFB3077 | TO-220AB | 75 V | 160A | 4.5 mΩ | Low conduction, suitable for high current applications |
IRFB3207 | TO-220AB | 75 V | 180A | 3.3 mΩ | Lower conduction resistance, suitable for high-efficiency power design |
IRFB4110 | TO-220AB | 100 V | 120A | 4.5 mΩ | Higher voltage tolerance, suitable for higher voltage applications |
IRFB4310 | TO-220AB | 100 V | 130A | 3.6 mΩ | Suitable for high current and high voltage power applications |
IRF2907Z | TO-220AB | 75 V | 209A | 3.3 mΩ | Excellent current handling capability, suitable for high load applications |
Selection Advice
Stromspannung: The VDS rating of the replacement model must be higher than the original to avoid breakdown.
Aktuell: The IDON of the replacement model must be greater than the original to prevent overheating.
RDS(on): The RDS(on) should be smaller than the original, or the power consumption will increase.
Paket: The package and pinout must be the same as the original, or it won’t work.