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IPB80N04S2-H4
IPB80N04S2-H4

IPB80N04S2-H4 | Datenblatt | Preis | PDF

The IPB80N04S2-H4 is a high-performance power MOSFET. For detailed specifications, including the Reference manual and technical information, explore the available PDF. Find useful insights about the device’s price, features, and application notes to support your design and decision-making process. Get comprehensive details in a concise and accessible format.
Marken: Infineon Technologies
Herunterladen: IPB80N04S2-H4 Datasheet PDF
Preis: Anfrage
Auf Lager: 4,748
FET-Typ: N-Kanal
Drain-Source-Spannung (Vdss): 40 V
Strom-Dauerentnahme (Id) bei 25 °C: 80A (Tc)
Paket: PG-TO263-3-2
Senden Sie Ihre Anfrage

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