GBU806 | Bridge | Circuit | Diode
Explore the GBU806 bridge and its detailed circuit and diode features. Compare the GBU808 vs GBU806 and find the best solution for your needs. Discover more about the GBU806 LT and its applications in various electronic projects.
- Voltage-PeakReverse(Max): 600 V
- Current-AverageRectified(Io): 8 A
- Voltage-Forward(Vf)(Max)@If: 1 V @ 4 A
- Current-ReverseLeakage@Vr: 5 µA @ 600 V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Price: inquiry
More Like This
Also Add to Cart
Related Products
KDZVTR16B
Rohm Semiconductor
1SMB5924BT3G
onsemi,Rochester Electronics, LLC
1SMB5923BT3G
onsemi
1SMA5922BT3G
onsemi,Rochester Electronics, LLC
SZMMSZ24T1G
onsemi
BZT52C4V7-HE3-08
Vishay General Semiconductor - Diodes Division
SZBZX84C12LT1G
onsemi,Rochester Electronics, LLC
MM3Z18VT1G
onsemi
1SMA5934BT3G
onsemi,Rochester Electronics, LLC
1SMA5936BT3G
onsemi,Rochester Electronics, LLC
Copyright © 2024 All Rights Reserved